Infineon IPA80R460CE: A High-Performance Power MOSFET for Efficient Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching devices. At the heart of many advanced power conversion systems, from industrial motor drives to renewable energy inverters and switched-mode power supplies (SMPS), lies the power MOSFET. The Infineon IPA80R460CE stands out as a premier component engineered to meet these challenges, offering a blend of ultra-low on-state resistance and superior switching performance.
This MOSFET is built on Infineon's proprietary CoolMOS™ CE technology, which represents a significant leap forward in high-voltage MOSFET design. The core innovation lies in its revolutionary superjunction structure. This technology enables the device to achieve an exceptionally low specific on-resistance (R DS(on)) for its voltage class, dramatically reducing conduction losses. For the IPA80R460CE, this translates to a maximum R DS(on) of just 0.046 Ω at a gate-source voltage of 10 V, ensuring minimal power is wasted as heat when the device is fully turned on.
Beyond its impressive conduction characteristics, the IPA80R460CE is optimized for fast switching. The low gate charge (Q G) and low effective output capacitance (C OSS) are critical figures of merit. These parameters ensure that the transistor can be turned on and off very quickly, which is essential for operating at high frequencies. This high-speed switching capability directly reduces switching losses, a dominant source of inefficiency in high-frequency applications. Consequently, designers can push for higher switching frequencies, allowing for the use of smaller passive components like inductors and transformers, thereby increasing overall power density.
The device is rated for a drain-source voltage (V DS) of 800 V, making it exceptionally robust and suitable for harsh environments prone to voltage spikes and transients. This high voltage rating provides a wide safety margin, enhancing system reliability. Furthermore, it features a very low intrinsic body-diode reverse recovery charge (Q rr). This characteristic is vital in bridge topology circuits (e.g., PFC stages, half-bridges, full-bridges) as it minimizes reverse recovery losses and associated electromagnetic interference (EMI), leading to cleaner and more efficient operation.
The combination of low conduction and switching losses makes the IPA80R460CE a cornerstone for building highly efficient and compact power systems. It enables designers to achieve new benchmarks in performance, whether the goal is to meet stringent energy efficiency regulations, reduce the size of an end product, or improve the thermal management of a design.
ICGOODFIND: The Infineon IPA80R460CE is a benchmark in high-voltage power switching, leveraging advanced CoolMOS™ CE technology to deliver an exceptional combination of ultra-low 0.046 Ω R DS(on) and fast switching capabilities. Its 800V rating and robust design make it an ideal and reliable choice for high-efficiency, high-power-density applications across industrial and consumer domains.
Keywords: CoolMOS™ CE, Low R DS(on), High-Efficiency Switching, 800V MOSFET, Fast Switching Performance
