Infineon BSC054N04NSGATMA1: Redefining Power Density with 40V, 4mΩ OptiMOS™ Technology

In the relentless pursuit of higher efficiency and power density, the Infineon BSC054N04NSGATMA1 stands out as a benchmark in power MOSFET technology. This Single N-Channel OptiMOS™ Power MOSFET is engineered to deliver exceptional performance in a compact package, making it an ideal solution for a wide array of demanding applications, from advanced computing and server power supplies to automotive systems and industrial motor drives.

The core of this device's superiority lies in its extremely low on-state resistance (RDS(on)) of just 4mΩ. This remarkably low figure is achieved through Infineon's advanced trench technology and proprietary manufacturing processes. The benefit is twofold: it minimizes conduction losses and significantly reduces power dissipation. For designers, this translates into higher overall system efficiency, cooler operation, and the potential for either a reduction in heatsink size or an increase in output power within the same form factor.

Rated for 40V drain-source voltage (VDS), the BSC054N04NSGATMA1 offers a robust and reliable switch for a variety of low-voltage applications. This voltage rating provides ample headroom for common 12V and 24V bus systems, ensuring reliable operation under voltage transients and spikes. Furthermore, the OptiMOS™ technology is renowned for its outstanding switching performance, characterized by low gate and output charges. This enables faster switching frequencies, which allows for the use of smaller passive components like inductors and capacitors, thereby pushing the boundaries of power density even further.

Housed in a space-efficient SuperSO8 package, this MOSFET demonstrates that high power handling does not require a large footprint. The package is designed for effective thermal management, facilitating the transfer of heat away from the silicon die to the PCB. This makes it exceptionally suited for modern, space-constrained electronic designs where board real estate is at a premium.

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The Infineon BSC054N04NSGATMA1 is a testament to the progress in power semiconductor technology, offering a rare combination of ultra-low resistance, high switching speed, and excellent thermal performance in a miniature package. It empowers engineers to create more efficient, powerful, and compact next-generation power solutions.

Keywords:

1. Low RDS(on)

2. Power Efficiency

3. OptiMOS™ Technology

4. High Power Density

5. SuperSO8 Package