Infineon BSC050N03LSG: A High-Performance 30V OptiMOS Power MOSFET
In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon BSC050N03LSG stands out as a premier solution, exemplifying the advanced OptiMOS technology platform. This 30V N-channel power MOSFET is engineered to deliver exceptional efficiency in switching applications, making it an ideal choice for a broad spectrum of demanding power management tasks.
A key strength of the BSC050N03LSG lies in its remarkably low typical on-state resistance (RDS(on)) of just 5.0 mΩ. This ultra-low resistance is a critical factor in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. The device is housed in the space-saving, thermally enhanced SuperSO8 package, which offers an excellent footprint-to-performance ratio. This package is crucial for modern, compact designs where board space is at a premium, as it allows for effective power dissipation without requiring a large area.

The MOSFET is optimized for high-frequency switching, a necessity in today's high-performance DC-DC converters. Its low gate charge (Qg) and figure of merit (FOM) ensure fast switching speeds and reduced driving losses. This makes it particularly suitable for synchronous rectification in switch-mode power supplies (SMPS), point-of-load (POL) converters, and voltage regulator modules (VRM) within computing and telecom infrastructure. Furthermore, its 30V drain-source voltage (VDS) rating provides a robust and reliable operating margin in standard 12V and 24V bus systems, enhancing system robustness.
Designed with robustness in mind, the BSC050N03LSG features a high peak current capability and an avalanche-rated design, ensuring it can withstand extreme operational stress and transient events. Its qualification for industrial-grade applications guarantees performance and longevity even in harsh environments.
ICGOOFind: The Infineon BSC050N03LSG is a top-tier power MOSFET that sets a high standard for performance. Its combination of ultra-low RDS(on), superior switching characteristics, and a thermally efficient package makes it an outstanding component for designers seeking to maximize power density and efficiency in their next-generation applications.
Keywords: OptiMOS Technology, Low RDS(on), SuperSO8 Package, High-Frequency Switching, Synchronous Rectification.
