Infineon IPC50N04S5-5R8: 50A OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion
In the world of modern power electronics, achieving high efficiency and reliability is paramount. The Infineon IPC50N04S5-5R8, a member of the advanced OptiMOS™ 5 power MOSFET family, stands out as a premier solution designed to meet these demanding requirements. This 40V, 50A N-channel MOSFET is engineered to deliver exceptional performance in a wide array of power conversion applications, from server and telecom power supplies to motor drives and battery management systems.
The cornerstone of this device's superiority is its exceptionally low typical on-state resistance (RDS(on)) of just 5.8 mΩ. This ultra-low resistance is a game-changer, as it directly translates to minimized conduction losses during operation. When a MOSFET has lower RDS(on), less energy is wasted as heat when the device is switched on. This not only boosts the overall efficiency of the system but also reduces the thermal stress on the component and the surrounding circuitry, leading to enhanced long-term reliability and potentially simpler thermal management designs.
Furthermore, the OptiMOS™ 5 technology platform optimizes the figure of merit (FOM), which balances RDS(on) and gate charge (Qg). A lower Qg means the device requires less energy to switch on and off rapidly. The IPC50N04S5-5R8 excels in this area, offering superior switching performance. This is critical for high-frequency switching power supplies, where faster switching enables the use of smaller passive components like inductors and capacitors, thereby reducing the overall system size, weight, and cost without compromising performance.
Housed in a robust SuperSO8 package (PG-TDSON-8), this MOSFET provides an excellent power-to-size ratio. The package is designed for low parasitic inductance and improved thermal characteristics, which is essential for managing power dissipation in space-constrained applications. Its industry-standard footprint also ensures easy drop-in compatibility with existing designs, facilitating straightforward upgrades and simplifying the PCB layout process for new projects.
Designers will appreciate the device's enhanced reliability and robustness, featuring a high avalanche ruggedness and an extended safe operating area (SOA). These characteristics make it a dependable choice for handling unpredictable voltage spikes and harsh operating conditions commonly encountered in industrial environments.
ICGOOODFIND: The Infineon IPC50N04S5-5R8 is a top-tier power MOSFET that sets a high benchmark for efficiency and power density. Its blend of an ultra-low 5.8 mΩ RDS(on), excellent switching characteristics, and a thermally efficient package makes it an ideal candidate for designers aiming to push the boundaries of performance in modern power conversion systems.
Keywords: OptiMOS 5, Low RDS(on), High-Efficiency, Power Conversion, SuperSO8 Package.
